| PART |
Description |
Maker |
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1212WR BF1212 BF1212R BF1212-2015 BF1212-15 |
BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Quanzhou Jinmei Electro...
|
| BF1101 BF1101R BF1101R-215 BF1101WR |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
|
| BF904A BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| BF1100R BF1100 |
Dual-gate MOS-FETs
|
NXP Semiconductors
|
| 2SK0665 2SK665 |
Silicon MOS FETs
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
Panasonic Semiconductor
|
| 2SJ0536 |
Small-signal device - Small-signal FETs - MOS FETs
Silicon MOS FETs (Small Signal)
SMini3-G1
From old datasheet system
|
Matsshita / Panasonic
|
| 3SK257 |
RF Dual Gate FETs
|
TOSHIBA
|
| 3SK274 |
RF Dual Gate FETs
|
TOSHIBA
|
